amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. maapgm0064-die rev ? preliminary information 1 rohs compliant primary applications ? multiple band point-to-point radio ? satcom ? ism band parameter symbol typical units bandwidth f 6.5-9.5 ghz output power pout 34.5 dbm power added efficiency pae 30 % 1-db compression point p1db 32 dbm small signal gain g 20 db input vswr vswr 1.8:1 output vswr vswr 3.0:1 gate supply current i gg < 5 ma drain supply current i dd < 1 ma noise figure nf 9.5 db 2 nd harmonic 2f -20 dbc 3 rd harmonic 3f -45 dbc 3 rd order intermodulation distortion, single carrier level = 20 dbm im3 -10 dbm 5 th order intermodulation distortion, single carrier level = 20 dbm im5 -25 dbm output third order intercept otoi 41 dbm electrical characteristics: t b = 40c 1 , z 0 = 50 , v dd = 8v, i dq 600 ma 2 , p in = 18 dbm, r g 120 ? also available in: samples description ceramic package sample board (die) mechanical sample (die) part number maapgm0064 MAAP-000064-SMB004 not available features ? 2 watt saturated output power level ? variable drain voltage (4-10v) operation ? msag? process ? high performance ceramic bolt down package description the maapgm0064-die is a 2-stage 2 w power amplifier with on-chip bias networks. this product is fully matched to 50 ohms on both the input and output. it can be used as a power amplifier stage or as a driver stage in high power applications. each device is 100% rf tested to ensure performance compliance. the part is fabricated using m/a- com?s gaas multifunction self- aligned gate process. m/a-com?s msag? process f eatures robust silicon-like manufacturing processes, planar processing of ion implanted transistors and multiple implant capability enabling power, low-noise, switch and digital fets on a single chip. the use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. 1. t b = mmic base temperature 2. adjust v gg between ?2.6 and ?1.2v to achieve specified idq.
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. maapgm0064-die rev ? preliminary information 2 rohs compliant operating instructions this device is static sensitive. please handle with care. to operate the device, follow these steps. 1. apply v gg = -2.7 v, v dd = 0 v. 2. ramp v dd to desired voltage, typically 8.0 v. 3. adjust v gg to set i dq , (approximately @ ?2.0 v). 4. set rf input. 5. power down sequence in reverse. turn v gg off last. characteristic symbol min typ max unit drain supply voltage v dd 4.0 8.0 10.0 v gate supply voltage v gg -2.4 -2.0 -1.3 v input power p in 18.0 21.0 dbm thermal resistance jc 12.4 c/w package base temperature t b note 5 c recommended operating conditions 4 parameter symbol absolute maximum units input power p in 23.0 dbm drain supply voltage v dd +12.0 v gate supply voltage v gg -3.0 v quiescent drain current (no rf, 40% idss) i dq 950 ma quiescent dc power dissipated (no rf) p diss 7.9 w junction temperature t j 170 c storage temperature t stg -55 to +150 c maximum ratings 3 3. operation beyond these limits may result in permanent damage to the part. 4. operation outside of these ranges may reduce product reliability. 5. mmic base temperature = 170c ? jc * v dd * i dq
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. maapgm0064-die rev ? preliminary information 3 rohs compliant figure 1. output power and power added efficiency vs. frequency @ p in =18.0 dbm, v dd =8v, i dq =600 ma 0 5 10 15 20 25 30 35 40 45 6.5 7 7.5 8 8.5 9 9.5 frequency (ghz) pout (dbm) 0 5 10 15 20 25 30 35 40 45 pae (%) output power (dbm) pae (%) figure 2. gain and input vswr vs. frequency (v dd =8 v, i dq =600 ma) 0 5 10 15 20 25 30 6.5 7.0 7.5 8.0 8.5 9.0 9.5 frequency (ghz) small signal gain (db) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 input vswr gain input vswr
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. maapgm0064-die rev ? preliminary information 4 rohs compliant mechanical information chip size: 2.95 x 2.95 x 0.075 mm ( 116 x 116 x 3 mils) pad size ( m) rf in and out 100 x 200 dc drain supply voltage vdd 200 x 150 dc gate supply voltage vgg 150 x 150 size (mils) 4 x 8 8 x 6 6 x 6 bond pad dimensions figure 3. die layout
amplifier, power, 2.0 w 6.5?9.5 ghz m/a-com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. m/a-com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does m/a-com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. maapgm0064-die rev ? preliminary information 5 rohs compliant figure 4. recommended operational configuration. wire bond as shown . assembly instructions: die attach: use ausn (80/20) 1 mil. preform sold er. limit time @ 310 c to less than 7 minutes. refer to application note an3017 for more detailed information. wirebonding: bond @ 160 c using standard ball or thermal compression wedge bond techniques. for dc pad c onnections, use either ball or wedge bonds. for best rf performance, use wedge bonds of shorte st length, although ball bonds are also acceptable. biasing note: must apply negative bias to v gg before applying positive bias to v dd to prevent damage to amplifier. die handling: refer to application note an3016. 100- 200 pf 100- 200 pf rf out rf in v dd 0.01-0.1 f 0.01-0.1 f 0.01-0.1 f 0.01-0.1 f 100- 200 pf 100- 200 pf v gg 40 assembly and bonding diagram
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